See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

DQG | 8

Temp:

S (-55 to 150)

ECO Plan:

Pb-Free (RoHS Exempt)

CSD17308Q3


30V N-Channel NexFET™ Power MOSFET

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Texas Instruments CSD17308Q3

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 46°C/W when mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.Max RθJC = 4.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%. View datasheet
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