This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET power MOSFET is designed to minimize losses in power conversion
applications and optimized for 5-V gate drive applications.
For all available packages, see the orderable addendum at the
end of the data sheet.
= 46°C/W when mounted on a 1 inch2
), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
= 4.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
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