This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to
minimize losses in power conversion applications.
Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu
pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration
≤100 μs, duty cycle ≤1%
For all available packages, see the orderable addendum at the end of the
View datasheet View product folder