See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

YJN | 3

Temp:

S (-55 to 150)

ECO Plan:

Green (RoHS & no Sb/Br)

CSD25501F3


–20-V P-Channel FemtoFET™ MOSFET

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Texas Instruments CSD25501F3

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

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