See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

YJN | 3

Temp:

S (-55 to 150)

ECO Plan:

Green (RoHS & no Sb/Br)

CSD25501F3


–20-V P-Channel FemtoFET™ MOSFET

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Texas Instruments CSD25501F3

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

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