The DRV870x-Q1 devices are single H-bridge gate drivers that use four
external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor.
A PH/EN, independent H-Bridge, or PWM interface allows simple
interfacing to controller circuits. An internal sense amplifier provides adjustable current
control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive
external reverse battery switch.
Independent Half Bridge mode allows sharing of half bridges to control
multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to
regulate the winding current using fixed off-time PWM current chopping.
devices include Smart Gate Drive technology to remove the need for any external gate components
(resistors and Zener diodes) while fully protecting the external FETs. The Smart Gate Drive
architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in
reducing electromagnetic interference (EMI) with programmable slew-rate control and protects
against any gate-short conditions. Additionally, active and passive pulldowns are included to
prevent any dv/dt gate turnon.
A low-power sleep mode is provided which shuts down internal circuitry to achieve a
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quiescent-current draw. The device can be used in a very compact design because of its small
5 mm × 5 mm package with few external components.