See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

DGN | 8

Temp:

Q (-40 to 125)

ECO Plan:

Green (RoHS & no Sb/Br)

EMB1412MYE/NOPB


EMB1412 MOSFET Gate Driver

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10 - 24 $ 1.46
25 - 99 $ 1.36
100 - 100 $ 1.18

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Texas Instruments EMB1412MYE/NOPB

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

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