The ISO5451-Q1 is a
5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A
source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output
side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short propagation time of 76 ns assures accurate
control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an
overload condition. Upon a DESAT detect, the gate driver output is driven low to
VEE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling
the FLT output at the input side low and blocking the isolator input. The
FLT output condition is latched and can be reset through a low-active pulse
at the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the
output is hard clamp to VEE2. If the output supply is unipolar, an active
Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing
IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two
undervoltage-lockout circuits monitoring the input side and output side supplies. If either side
has insufficient supply the RDY output goes low, otherwise this output is high.
The ISO5451-Q1 is
available in a 16-pin SOIC package. Device operation is specified over a temperature range from
–40°C to +125°C ambient.
For all available packages, see the orderable addendum at the
end of the data sheet.
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