The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each "compound" output driver stage includes MOS and bipolar
transistors operating in parallel that together sink more than 5A peak from capacitive loads.
Combining the unique characteristics of MOS and bipolar devices reduces drive current variation
with voltage and temperature. Separate input and output ground pins provide Negative Drive
Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The
gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver
outputs swing from VCC to the output ground VEE which
can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin
are also provided. The drivers can be operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in the SOIC-8 and the
thermally-enhanced WSON-10 packages.
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