The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode
Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge
configuration for automotive applications. The device has an integrated 100-V bootstrap diode and
independent inputs for the high-side and low-side outputs for maximum control flexibility. The
high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from
exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the
device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the
VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and
turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low
state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz.
The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power
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