See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

DPR | 10

Temp:

Q (-40 to 125)

ECO Plan:

Green (RoHS & no Sb/Br)

LM5113SDE/NOPB


100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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Qty.Price
1 - 9 $ 4.28
10 - 24 $ 3.85
25 - 99 $ 3.51
100 - 249 $ 3.16
250 - 499 $ 2.86
500 - 749 $ 2.41
750 - 999 $ 2.04
1000 - 9999 $ 1.71

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Texas Instruments LM5113SDE/NOPB

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

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