The LM5113 device is designed to drive both the high-side and the low-side enhancement
mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating
high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V.
The high-side bias voltage is generated using a bootstrap technique and is internally clamped at
5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of
enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand
input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs,
providing flexibility to adjust the turnon and turnoff strength independently.
The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113
and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more
In addition, the strong sink capability of the LM5113 maintains the gate in the low
state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The
LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin
package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact
footprint and minimized package inductance.
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