See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

MOF | 9

Temp:

Q (-40 to 125)

ECO Plan:

Green (RoHS & no Sb/Br)

LMG5200MOFT


80V GaN Half Bridge Power Stage

TI Store Price:

 
 
Qty.Price
1 - 9 $ 13.95
10 - 24 $ 12.56
25 - 99 $ 12.04
100 - 249 $ 10.59
250 - 499 $ 10.13
500 - 749 $ 9.34
750 - 999 $ 8.42
1000 - 9999 $ 7.48

Adjust your quantity during checkout

Texas Instruments LMG5200MOFT

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

View datasheet
View product folder
Order SummaryEdit >
Subtotal: $0.00
Shipping & Handling: -
Total (USD): $0.00