The TAS5755M is functionally equivalent to the TAS5731M, but in a Pad-Up design that
allows the device to create more power without experience a shutdown due to thermal limitations of
a pad-down device.
Like the TAS5731M, the TAS5755M is a very flexible device, offering output configuration
support for 2.1, 2.0, and mono applications. Single chip 2.1 is accomplished by running each of the
Left and Right Speaker from an independent half-bridge and the subwoofer from a dedicated
full-bridge. Oversampling, combined with a fourth-order noise shaper, provides a flat noise floor
and excellent dynamic range from 20 Hz to 20 kHz.
A powerful output stage made up of 80-mΩ output MOSFETs coupled with a pad-up design to
allow the use of a heatsink, enables the device to make as much as 2 × 50 W for a 6-Ω load.
Conversely, in mono mode, it can make as much as 1 × 70 W continuously with a 4-Ω load.
Audio processing for the device consists of Stereo, Mono, and 2.1 signal mixing, as well
as DC blocking filters, 8 BiQuads for L and R and 2 Biquads for the subwoofer channel. In addition
to equalization, power limiting is accomplished by a two band Log-style DRC. A separate single band
DRC is provided for the subwoofer.
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