See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

P | 8

Temp:

C (0 to 70)

ECO Plan:

Pb-Free (RoHS)

TLC27L1ACP


LinCMOS™ Low-Power Operational Amplifier

TI Store Price:

 
 
Qty.Price
1 - 9 $ 1.26
10 - 24 $ 1.08
25 - 99 $ 1.04
100 - 249 $ 0.79
250 - 499 $ 0.79
500 - 749 $ 0.66
750 - 999 $ 0.53
1000 - 9999 $ 0.43

Adjust your quantity during checkout

Texas Instruments TLC27L1ACP

The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable amplifier. These devices use the Texas Instruments silicon-gate LinCMOS™ technology, which provides offset-voltage stability far exceeding the stability available with conventional metal-gate processes.

Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10 mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS™ operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.

The device inputs and output are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC27L1 incorporates internal electrostatic-discharge (ESD) protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

View datasheet
View product folder
Order SummaryEdit >
Subtotal: $0.00
Shipping & Handling: -
Total (USD): $0.00