See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

PW | 8

Temp:

I (-40 to 85)

ECO Plan:

Green (RoHS & no Sb/Br)

TLV2322IPWR


Dual Low-Voltage uPower Operational Amplifier

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Qty.Price
1 - 9 $ 2.02
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100 - 249 $ 1.39
250 - 499 $ 1.37
500 - 749 $ 1.15
750 - 999 $ 0.95
1000 - 9999 $ 0.79

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Texas Instruments TLV2322IPWR

The TLV232x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. This amplifier is especially well suited to ultra-low-power systems that require devices to consume the absolute minimum of supply currents. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.

These amplifiers are specifically targeted for use in very low-power, portable, battery-driven applications with the maximum supply current per operational amplifier specified at only 27 uA over its full temperature range of -40°C to 85°C.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD can result in the degradation of the device parametric performance. View datasheet
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