The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs
with adaptive dead-time control. This driver is optimized for use in variety of high-current,
single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small
solution size and low-EMI emissions.
The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive
voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and
4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power
MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node
transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an
N-channel MOSFETs in a half-bridge configuration.
The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced
small sized VSON package. The driver is specified to operate in the temperature range of –40°C to
105°C with the absolute maximum junction temperature of 150°C.
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