The UCC21220 device is an isolated
dual-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFET, IGBT, and GaN
transistors with the best-in-class dynamic performance.
The device can be configured as two low-side
drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a
single driver which doubles the drive strength for heavy load conditions without internal
shoot-through due to the best-in-class delay matching performance.
The input side is isolated from the two output drivers by a
3.0-kVRMS isolation barrier, with a minimum of 100-V/ns common-mode
transient immunity (CMTI).
Protection features include: DIS pin shuts
down both outputs simultaneously when it is set high; INA/B pin rejects input transient shorter
than 5-ns; both inputs and outputs can withstand –2-V spikes for 200-ns, all supplies have
undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when
unpowered or floated.
With these features, the device enables high
efficiency, high power density, and robustness in a wide variety of power applications.
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