The UCC21220 and UCC21220A devices are
isolated dual-channel gate driver with 4-A peak-source and 6-A peak-sink
current. It is designed to drive power MOSFET, IGBT, and GaN
transistors with the best-in-class dynamic performance.
The devices can be configured as two low-side drivers, two high-side drivers, or
half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive
strength for heavy load conditions without internal shoot-through due to the best-in-class delay
The input side is isolated from the two output drivers by a
3.0-kVRMS isolation barrier, with a minimum of 100-V/ns common-mode
transient immunity (CMTI).
Protection features include: DIS pin shuts down both outputs simultaneously when it is
set high; INA/B pin rejects input transient shorter than 5-ns; both inputs and outputs can
withstand –2-V spikes for 200-ns, all supplies have undervoltage lockout (UVLO), and active pull
down protection clamps the output below 2.1-V when unpowered or floated.
With these features, the device enables high efficiency, high power density, and
robustness in a wide variety of power applications.
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