The UCC27211A-Q1 device driver is based on the popular
UCC27201 MOSFET drivers; but,
this device offers several significant performance improvements.
The peak output pullup and pulldown current has been increased to 4-A source and 4-A
sink, and pullup and pulldown resistance have been reduced to 0.9 Ω, and thereby allows for driving
large power MOSFETs with minimized switching losses during the transition through the Miller
Plateau of the MOSFET. The input structure can directly handle –10 VDC, which increases robustness
and also allows direct interface to gate-drive transformers without using rectification diodes. The
inputs are also independent of supply voltage and have a 20-V maximum rating.
For all available packages, see the orderable addendum at the
end of the data sheet.
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The switching node of the UCC27211A-Q1 (HS pin) can handle
–18-V maximum, which allows the high-side channel to be protected from inherent negative voltages
caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 has increased hysteresis that allows for interface to analog or digital PWM
controllers with enhanced noise immunity.
The low-side and high-side gate drivers are independently controlled and matched to 2 ns
between the turn on and turn off of each other.
An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes.
Undervoltage lockout is provided for both the high-side and the low-side drivers which provides
symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below
the specified threshold.
The UCC27211A-Q1 device is offered in
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