The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can
effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes
shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current
pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation
delay, typically 13 ns.
UCC27511 features a dual-input design which offers flexibility of implementing both
inverting (IN pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or
IN pin can be used to control the state of the driver output. The unused input pin can be used for
enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the
input pins ensure that outputs are held low when input pins are in floating condition. Hence the
unused input pin is not left floating and must be properly biased to ensure that driver output is
in enabled for normal operation.
The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible
low-voltage logic which is fixed and independent of the VDD supply voltage.
Wide hysteresis between the high and low thresholds offers excellent noise immunity.
The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive
current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic,
Miller turnon effect. The UCC27511 device also features a unique split output configuration where
the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin
arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL
pins respectively and easily control the switching slew rates.
UCC27511 and UCC27512 are designed to operate over a wide VDD
range of 4.5 to 18 V and wide temperature range of 40°C to 140°C. Internal Undervoltage Lockout
(UVLO) circuitry on VDD pin holds output low outside
VDD operating range. The capability to operate at low voltage levels such as
below 5 V, along with best-in-class switching characteristics, is especially suited for driving
emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.
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