The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives
MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the
UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail
drive capability and extremely small propagation delay typically 13 ns.
The UCC27517A-Q1 device handles –5 V at input.
The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current
capability at VDD = 12 V.
The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V
and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on
VDD pin holds the output low outside VDD operating
range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class
switching characteristics, is especially suited for driving emerging wide band-gap power-switching
devices such as GaN power-semiconductor devices.
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