The UCC27516 and UCC27517 single-channel, high-speed, low-side gate driver devices can
effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes
shoot-through current, UCC27516 and UCC27517 can source and sink high peak-current pulses into
capacitive loads offering rail-to-rail drive capability and extremely small propagation delay,
typically 13 ns.
The UCC27516 and UCC27517 provides 4-A source, 4-A sink (symmetrical drive) peak-drive
current capability at VDD = 12 V.
The UCC27516 and UCC27517 are designed to operate over a wide VDD range of 4.5 to 18 V
and wide temperature range of 40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on the
VDD pin holds output low outside VDD operating range. The capability to operate at low voltage
levels such as below 5 V, along with best-in-class switching characteristics, is especially suited
for driving emerging wide band-gap power-switching devices such as GaN power semiconductor
The UCC27516 and UCC27517 devices feature a dual-input design which offers flexibility of
implementing both inverting (IN pin) and noninverting (IN+ pin) configurations with the same
device. Either the IN+ or IN pin can be used to control the state of the driver output. The unused
input pin can be used for enable and disable function. For safety purpose, internal pullup and
pulldown resistors on the input pins ensure that outputs are held low when input pins are in
floating condition. Hence the unused input pin is not left floating and must be properly biased to
ensure that driver output is in enabled for normal operation.
The input pin threshold of the UCC27516 and UCC27517 devices are based on TTL and CMOS
compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide
hysteresis between the high and low thresholds offers excellent noise immunity.
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