The LMG1020 device is a single, low-side GaN driver designed for driving GaN FETs and
logic-level MOSFETs in high-speed applications. The design simplicity of the LMG1020 enables
extremely fast propagation delays of 2.5 nanoseconds. The drive strength is independently
adjustable for the pull-up and pull-down edges by connecting external resistors between the gate
and OUTH and OUTL, respectively.
The GaN driver features undervoltage lockout (UVLO) and overtemperature protection (OTP)
in the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes
power density in high-frequency applications.
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