See datasheet for actual packaging/pinout drawings

Package | PIN:

RVR | 19


Q (-40 to 125)

ECO Plan:


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XLMG1210RVRT-200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time

The LMG1210 is a 200-V, half-bridge high performance gallium nitride field effect transistor (GaN FET) driver designed for applications requiring high switching speed, minimized dead time, as well as high efficiency. Drive voltage is precisely controlled by an internal LDO to 5 V when higher auxiliary voltages are used.

The LMG1210 GaN driver is designed for ultra-high frequency applications and features adjustable dead-time capability, very small propagation delay, as well as 1.5-ns high-side low-side matching to optimize system efficiency.

Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses. An external bootstrap diode is used to charge the high-side bootstrap capacitor to allow optimal selection for the circuit operating conditions.

An internal switch turns the bootstrap diode off when the low side is not on, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge when a silicon diode is used as the bootstrap diode.

The GaN driver can operate in two different modes: independent input mode (IIM) and PWM mode. In the IIM each of the outputs is independently controller by a dedicated input. In PWM mode the two complementary output signals are generated from a single input, and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

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