The LMG1210 is a 200-V, half-bridge high performance gallium nitride field effect
transistor (GaN FET) driver designed for applications requiring high switching speed, minimized
dead time, as well as high efficiency. Drive voltage is precisely controlled by an internal LDO to
5 V when higher auxiliary voltages are used.
The LMG1210 GaN driver is designed for ultra-high frequency applications and features
adjustable dead-time capability, very small propagation delay, as well as 1.5-ns high-side low-side
matching to optimize system efficiency.
Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to
reduce additional switching losses. An external bootstrap diode is used to charge the high-side
bootstrap capacitor to allow optimal selection for the circuit operating conditions.
An internal switch turns the bootstrap diode off when the low side is not on, effectively
preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge
when a silicon diode is used as the bootstrap diode.
The GaN driver can operate in two different modes: independent input mode (IIM) and PWM
mode. In the IIM each of the outputs is independently controller by a dedicated input. In PWM mode
the two complementary output signals are generated from a single input, and the user can adjust the
dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from
–40°C to 125°C and is offered in a low-inductance WQFN package.
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