The LMG3410 Single-Channel Gallium-Nitride
(GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by
8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device while
providing the native switching performance of the GaN power transistor. When the LMG3410 is
unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. In
normal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device is
gated directly from an internally-generated negative voltage supply.
The integrated driver provides additional protection and convenience features. Fast
over-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safe
system; the devices status is indicated by the FAULT output. An internal
5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally,
externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drain
ringing, and electrical noise generation.
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