See datasheet for actual packaging/pinout drawings

Packaging

Package | PIN:

RWH | 32

Temp:

Q (-40 to 125)

ECO Plan:

TBD

XLMG3410RWHT


600-V 12-A Single Channel GaN Power Stage

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Texas Instruments XLMG3410RWHT

The LMG3410 Single-Channel Gallium-Nitride (GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by 8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device while providing the native switching performance of the GaN power transistor. When the LMG3410 is unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. In normal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device is gated directly from an internally-generated negative voltage supply.

The integrated driver provides additional protection and convenience features. Fast over-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safe system; the device’s status is indicated by the FAULT output. An internal 5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally, externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drain ringing, and electrical noise generation.

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